jiangsu changjiang electron ics technology co., lt d to-92 plastic-encapsulate transistors STB1277 transistor (pnp) fea tures z audio power amplifier z high current application z high current : i c =-2a z complementary pair with std1862 maximum ra tings (t a =25 unless otherwise noted) symbol para meter value unit v cbo collector-base vo lt age -30 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -5 v i c collector current -contin uo us -2 a p c collector power dissip a tion 625 mw t j junction temperature 150 t stg storage tempe r ature -55-150 electrical chara cteristics (t a=25 unless other w is e specified) p a rameter symbol t est conditions min typ max unit collector-base b reakdown voltage v cbo i c = -100ua, i e =0 -30 v collector-emitter brea kd own voltage v ceo i c = -1ma , i b =0 -30 v emitter-base b r eakdown voltage v ebo i e = -1ma, i c =0 -5 v collector cut-o ff cu rrent i cbo v cb = -30 v, i e =0 -0.1 ua emitter cut-off current i ebo v eb = -5v, i c =0 -0.1 u a dc current ga in h fe v ce =-2v, i c = -500ma 100 320 collector-emitter satur atio n voltage v ce(sat) i c =-2a, i b = -0.2a -0.8 v base-emitter on voltage v be(on) v ce =-2v, i c = -500ma -1 v trans ition frequency f t v ce = -5v, i c = -50ma 170 mhz collector outp u t capacitance cob vcb =-10v,i e =0,f=1mh z 48 pf classification h fe rank o y ra nge 100-200 160-320 to-92 1. emitter 2. collector 3. base www.cj-elec.com 1 c,dec,2015
min max min max a 3. 300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4. 300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 symbol dimensions in millimeters dimensions in inches 1.270 typ 0.050 typ to-92 package outline dimensions to-92 suggested pad layout www.cj-elec.com , dec ,2015
to-92 7 d s h d q g 5 h h o z z z f m h o h f f r p 3 c ,dec,2015
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